? 2003 ixys all rights reserved ixfl 44n60 v dss = 600 v i d25 = 41 a r ds(on) = 130 m ? ? ? ? ? t rr 250 ns symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 3 ma 600 v v gh(th) v ds = v gs , i d = 8 ma 2.5 4.5 v i gss v gs = 20 v dc , v ds = 0 200 na i dss v ds = v dss t j = 25 c 100 a v gs = 0 v t j = 125 c2ma r ds(on) v gs = 10 v, i d = i t notes 1, 2 130 m ? symbol test conditions maximum ratings v dss t j = 25 c to 150 c 600 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 600 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c41a i dm t c = 25 c, pulse width limited by t jm 176 a i ar t c = 25 c44a e ar t c = 25 c60mj e as t c = 25 c3j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 5 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 500 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t j 1.6 mm (0.63 in) from case for 10 s - c v isol 50/60 hz, rms t = 1 min 2500 v~ i isol 1 ma t = 1 s 3000 v~ m d mounting torque 1.5/13 nm/lb.in. terminal connection torque 1.5/13 nm/lb.in. weight 8g hiperfet tm power mosfets single die mosfet n-channel enhancement mode avalanche rated, high dv/dt, low t rr ds99092(10/03) preliminary data sheet g d s (backside) isoplus-264 tm g = gate d = drain s = source features z silicon chip on direct-copper-bond substrate - high power dissipation - isolated mounting surface - 2500v electrical isolation z low drain to tab capacitance(<30pf) z low r ds (on) hdmos tm process z rugged polysilicon gate cell structure z unclamped inductive switching (uis) rated z fast intrinsic rectifier applications z dc-dc converters z battery chargers z switched-mode and resonant-mode power supplies z dc choppers z ac motor control advantages z easy assembly z space savings z high power density
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 ixfl 44n60 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = i t , note:1 30 45 s c iss 8900 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 1000 pf c rss 330 pf t d(on) 42 ns t r v gs = 10 v, v ds = 0.5 ? v dss , i d = i t 55 ns t d(off) r g = 1 ? (external), 110 ns t f 45 ns q g(on) 330 nc q gs v gs = 10 v, v ds = 0.5 ? v dss , i d = i t 60 nc q gd 65 nc r thjc 0.25 k/w r thck 0.07 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 44 a i sm repetitive; 176 a pulse width limited by t jm v sd i f = i s , v gs = 0 v, 1.3 v note:1 t rr i f = 50a, -di/dt = 100 a/ s, v r = 100 v 250 ns q rm 1.4 c i rm 8a please see ixfn44n60 data sheet for characteristic curves. note: 1. pulse test, t 300 s, duty cycle d 2 % 2. test current i t = 22a isoplus 264 outline
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